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Product Data Sheet
March 31, 2003
9.6 mm Discrete HFET
TGF4260-SCC
Key Features and Performance
* * * * * * * 9600 m x 0.5 m HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz Suitable for high reliability applications 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)
Primary Applications
* * * Cellular Base Stations High-reliability space Military
Description
The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE. Bond pad and backside metallization are gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4260-SCC is readily assembled using automatic equipment.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4260-SCC
TABLE I MAXIMUM RATINGS SYMBOL
VDS VGS PD TCH TSTG TM
PARAMETER 1/
Drain to Source Voltage Gate to Source Voltage Range Power Dissipation Operating Channel Temperature Storage Temperature Mounting Temperature (30 seconds)
VALUE
12 V 0 to -5.0 Volts 6.8 W 150C -65 to 200C 320C
NOTES
2/ 3/, 4/
1/ These ratings represent the maximum values for this device. Stresses beyond those listed under "Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "DC Probe Characteristics" is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability. 2/ When operated at this bias condition with a base plate temperature of 70 0C, the MTTF life is reduced from 1.7 E+12 to 3 E+9 hours. 3/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels 4/ These ratings apply to each individual FET
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TABLE II DC PROBE CHARACTERISTICS (TA = 25 C, Nominal) Symbol IDSS GM VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum --1 17 17 Typical 2352 1584 1.85 22 22
TGF4260-SCC
Maximum --3 30 30
Unit mA mS V V V
Note 1/ 1/ 2/ 2/ 2/
1/ Total for eight FETS 2/ VP, VBGS, and VBGD are negative.
TABLE III ELECTRICAL CHARACTERISTICS (TA = 25 C, Nominal) Bias Conditions: Vd = 8.5 V, Id = 520 mA Symbol Pout Gp PAE Parameter Output Power Power Gain Power Added Efficiency Typical 37 9.5 52 Unit dBm dB %
TABLE IV THERMAL INFORMATION* Parameter RqJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 8.5 V ID = 520 mA Pdiss = 6.8 W TCH o ( C) 101.64 RqJC (C/W) 7.16 TM (HRS) 1.7 E+12
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * The thermal information is a result of a detailed thermal model.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4260-SCC
TYPICAL PERFORMANCE
(TA = 25 C, Nominal)
1.4 1.2
Vg
Drain Current (A)
1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10
-2.25 V -2.0 V -1.75 V -1.5 V -1.25 V -1.0 V -0.75 V
Drain Voltage (V)
Bias Conditions: F = 6 GHz, Vd = 8.5 V, Iq = 795 mA
1.25 1.2 1.15
Drain Current (A)
1.1 1.05 1 0.95 0.9 0.85 0.8 16 18 20 22 24 26 28 30
Input Power (dBm)
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4260-SCC
TYPICAL PERFORMANCE
Bias Conditions: F = 6 GHz, Vd = 8.5 V, Iq = 795 mA
55 50 45 40 35 30 25 20 15 10 5 0 16 18 20 22 24 26 28 30
PAE (%)
Input Power (dBm)
13
12
Gain (dB)
11
10
9
8 16 18 20 22 24 26 28 30
Input Power (dBm)
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet
March 31, 2003
TGF4260-SCC
TYPICAL PERFORMANCE
Bias Conditions: F = 6 GHz, Vd = 8.5 V, Iq = 795 mA
39 37
Output Power (dBm)
35 33 31 29 27 16 18 20 22 24 26 28 30
Input Power (dBm)
Bias Conditions: F = 6 GHz, Vd = 8.5 V, Id = 520 mA
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet
March 31, 2003
TGF4260-SCC
Unmatched Modeled S-Parameter Data for the TGF4260-SCC
S11 FREQ (GHz)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0
S21 ANG () deg
-142.378 -160.678 -167.064 -170.296 -172.250 -173.564 -174.511 -175.232 -175.802 -176.269 -176.662 -177.000 -177.297 -177.562 -177.803 -178.025 -178.231 -178.424 -178.607 -178.782 -178.949 -179.110 -179.266 -179.417 -179.564 -179.708 -179.848 -179.986
S12 ANG () deg
105.604 93.104 86.611 81.733 77.536 73.710 70.122 66.712 63.445 60.305 57.281 54.367 51.559 48.855 46.254 43.753 41.353 39.050 36.846 34.737 32.724 30.804 28.976 27.239 25.593 24.034 22.563 21.177
S22 ANG () deg
18.236 9.671 6.854 5.622 5.098 5.000 5.217 5.705 6.448 7.442 8.690 10.198 11.968 14.002 16.295 18.833 21.596 24.556 27.673 30.902 34.192 37.493 40.755 43.932 46.987 49.893 52.628 55.182
MAG dB
-0.377 -0.368 -0.364 -0.360 -0.356 -0.351 -0.346 -0.340 -0.333 -0.327 -0.320 -0.313 -0.305 -0.298 -0.290 -0.283 -0.276 -0.269 -0.262 -0.255 -0.249 -0.242 -0.236 -0.230 -0.225 -0.219 -0.214 -0.209
MAG dB
16.279 10.599 7.118 4.606 2.630 0.994 -0.409 -1.643 -2.750 -3.756 -4.682 -5.543 -6.349 -7.108 -7.828 -8.513 -9.167 -9.794 -10.398 -10.979 -11.540 -12.084 -12.611 -13.124 -13.622 -14.107 -14.581 -15.043
MAG dB
-35.345 -35.031 -35.026 -35.090 -35.194 -35.320 -35.473 -35.645 -35.831 -36.027 -36.233 -36.444 -36.648 -36.845 -37.028 -37.190 -37.323 -37.419 -37.484 -37.503 -37.477 -37.406 -37.291 -37.140 -36.948 -36.719 -36.472 -36.199
MAG dB
-2.334 -2.176 -2.126 -2.086 -2.044 -1.998 -1.947 -1.892 -1.834 -1.774 -1.712 -1.648 -1.585 -1.522 -1.459 -1.398 -1.338 -1.280 -1.224 -1.170 -1.119 -1.069 -1.022 -0.977 -0.934 -0.893 -0.854 -0.817
ANG () deg
-175.122 -176.556 -176.745 -176.594 -176.322 -176.008 -175.688 -175.382 -175.099 -174.846 -174.627 -174.441 -174.290 -174.172 -174.084 -174.026 -173.995 -173.988 -174.004 -174.039 -174.091 -174.160 -174.241 -174.335 -174.438 -174.551 -174.670 -174.796
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
7
Product Data Sheet
March 31, 2003
TGF4260-SCC Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
8
Product Data Sheet
March 31, 2003
TGF4260-SCC
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Die are shipped in gel pack unless otherwise specified.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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